By pulsed-laser deposition epitaxial thin films of Sr2FeMoO6 have been prepared on (100) SrTiO3 substrates. Already for a deposition temperature of 320 °C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the FeMo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4muB per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnetic arrangement. We found at 300 K an ordinary Hall coefficient of -6.01×10-10 m3/As, corresponding to an electronlike charge-carrier density of 1.3 per FeMo pair. In the semiconducting films the magnetic moment is reduced to 1muB/f.u. due to disorder in the FeMo sublattice. In low fields an anomalous holelike contribution dominates the Hall voltage, which nearly vanishes at low temperatures for the metallic films only.