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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 5(28), p. 328-331, 2007

DOI: 10.1109/led.2007.895391

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High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

Journal article published in 2007 by Yong Cai, Zhiqun Cheng, Zhenchuan Yang, Chak Wah Tang, Kei May Lau, Kevin J. Chen ORCID
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This paper is available in a repository.

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Abstract

This letter presents the high-temperature performance of AlGaN/GaN HEMT direct-coupled FET logic (DCFL) integrated circuits. At 375 degC, enhancement-mode (E-mode) AlGaN/GaN HEMTs which are used as drivers in DCFL circuits exhibit proper E-mode operation with a threshold voltage (VTH) of 0.24 V and a peak current density of 56 mA/mm. The monolithically integrated E/D-mode AlGaN/GaN HEMTs DCFL circuits deliver stable operations at 375 degC: An E/D-HEMT inverter with a drive/load ratio of 10 exhibits 0.1 V for logic-low noise margin (NML) and 0.3 V for logic-high-noise margin (NMH) at a supply voltage (VDD) of 3.0 V; a 17-stage ring oscillator exhibits a maximum oscillation frequency of 66 MHz, corresponding to a minimum propagation delay ( taupd) of 446 ps/stage at VDD of 3.0 V