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American Physical Society, Physical Review Letters, 5(102)

DOI: 10.1103/physrevlett.102.057206

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Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in Eu X ( X = Te , Se, S, O) Magnetic Semiconductors

Journal article published in 2009 by Narcizo M. Souza Neto, Daniel Haskel, Yuan-Chieh Tseng, Gerard Lapertot
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (Te-->O) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.