We report on the electrical properties of Te-doped GaAs nanowires (NW) grown via the vapor-liquid-solid mechanism. Gold nanoparticles were used as growth catalysts and contacts for electrical measurements using a nanoprobe technique. Semi-log I-V curves show 6-8 decades of forward-voltage linearity giving an ideality factor of 1.25 ± 0.06 and barrier height of 0.78 ± 0.04 eV. When normalized to NW cross-sectional area, all curves overlapped consistent with an n-type carrier concentration (9 ± 1) × 1017 cm−3 and a constant NW resistivity (2.5 ± 0.5) × 10−3 Ω cm. Raman spectroscopy indicated a small surface depletion width of less than 5 nm.