Published in
American Institute of Physics, Applied Physics Letters, 19(95), p. 192505
DOI: 10.1063/1.3264076
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Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix
,
Jürgen Fassbender ,
Heidemarie Schmidt
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Abstract
Crystalline Mn 5 Ge 3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn 5 Ge 3 . Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn 5 Ge 3 nanomagnets, rather than by the interparticle interaction through the Mn-diluted Ge matrix.