Dissemin is shutting down on January 1st, 2025

Published in

American Chemical Society, ACS Applied Materials and Interfaces, 11(3), p. 4370-4373, 2011

DOI: 10.1021/am201021m

Links

Tools

Export citation

Search in Google Scholar

X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering

Journal article published in 2011 by C. V. Ramana, R. S. Vemuri, V. V. Kaichev, V. A. Kochubey, A. A. Saraev ORCID, V. V. Atuchin
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Orange circle
Postprint: archiving restricted
  • Must obtain written permission from Editor
  • Must not violate ACS ethical Guidelines
Upload
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

The La(2)O(3)/Si thin films have been deposited by reactive DC magnetron sputtering. Amorphous state of La(2)O(3) layer has been shown by RHEED observation. Top surface chemistry of the a-La(2)O(3) has been evaluated with layer-by-layer depth profiling by ion bombardment and XPS measurements. It was found by core level spectroscopy that the top surface of the a-La(2)O(3) film consists of hydrocarbon admixture, lanthanum carbonate, and hydroxides that formed as a result of contact with air atmosphere. Thickness of this top surface modified layer is below 1 nm for a contact time of ~1.5 h with air at normal conditions.