Published in
American Institute of Physics, Journal of Applied Physics, 6(96), p. 3580
DOI: 10.1063/1.1777805
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High-quality as-grown MgB[sub 2] thin-film fabrication at a low temperature using an in-plane-lattice near-matched epitaxial-buffer layer
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M. Takata,
S. Yata,
T. Kato,
K. Yamanaka,
Y. Yamada,
A. Matsushita,
S. Kubo
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Abstract
An as-grown MgB 2 crystalline thin film was fabricated at a low temperature of 270° C on an in-plane-lattice near-matched TiZr buffer layer grown on a sapphire Al 2 O 3 (0001) surface. The critical temperature and the superconductivity critical current density of MgB 2/ TiZr / Al 2 O 3 were found to be high compared with those of MgB 2/ Al 2 O 3 . The film was characterized by using synchrotron x-ray diffraction. The epitaxial relationship in the plane was MgB 2[01 1 0]// TiZr [01 1 0]// sapphire [11 2 0] . In-plane-lattice spacings, d// MgB 2 , d// TiZr , and d// sapphire obtained were 0.268, 0.258, and 0.239 nm for the MgB 2(01 1 0) , TiZr (01 1 0) , and sapphire (11 2 0) planes, respectively.