Published in
Elsevier, Solid-State Electronics, 10(44), p. 1857-1860
DOI: 10.1016/s0038-1101(00)00136-2
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Sidegating mechanism as a function of the sidegate-to-channel spacing
Journal article published in 2000 by
Eugenio F. Prokhorov 
,
Nikolai B. Gorev,
Inna F. Kodzhespirova,
Yury A. Kovalenko,
Yury A. Kovalenko
,
Nikolai B. Gorev,
Inna F. Kodzhespirova,
Yury A. Kovalenko,
Yury A. Kovalenko
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Abstract
It is shown that the type of nonlinearity of the substrate current–voltage characteristic beyond the sidegating threshold changes from super to sublinearity as the sidegate-to-channel spacing increases. Based on this, it is concluded that the sidegating mechanism is a function of the sidegate-to-channel spacing. This conclusion is confirmed using a simple one-dimensional computational model.