Magnetic tunnel junctions (MTJs) composed of fer-romagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a ca-pacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parame-ters are directly included to improve the agreement of simula-tion with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design. Index Terms—Compact modeling, magnetic tunnel junction (MTJ), perpendicular magnetic anisotropy (PMA), spin transfer torque (STT).