Royal Society of Chemistry, Chemical Communications, 75(50), p. 11012
DOI: 10.1039/c4cc04928d
Full text: Unavailable
Here we report a three-step growth method for high-quality mono-layer, bi-layer and tri-layer graphene with coverage ∼90% at atmospheric pressure. The growth temperature and gas flow rate have been found to be the key factors. This method would be of great importance for the large scale production of graphene with defined thickness.