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Published in

American Institute of Physics, Applied Physics Letters, 26(75), p. 4177

DOI: 10.1063/1.125574

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Suppression of growth-induced perpendicular magnetic anisotropy in Co–Pt alloys by trace amounts of Si

Journal article published in 1999 by Shapiro Al, A. L. Shapiro, O. Vajk, F. Hellman, K. M. Ring, K. L. Kavanagh ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

( Co x Pt 1-x)1-y Si y alloys with Si content from 1 to 20 at. % have been grown over a range of growth conditions. Co-deposition of even trace amounts of Si with Co–Pt alloys causes the growth-induced magnetic anisotropy and chemical clustering found in these vapor-deposited alloy films to decrease or vanish. It also causes significant reduction in grain size. Addition of 5 at. % Si eliminates anisotropy completely. Addition of 1 at. % Si produces a film with magnetic properties identical to pure Co–Pt alloys grown at lower deposition temperatures. We suggest this suppression of anisotropy and related effects are due to a decrease in surface mobility during growth in the presence of even trace amounts of Si. © 1999 American Institute of Physics.