Published in
American Institute of Physics, Applied Physics Letters, 14(106), p. 142101, 2015
DOI: 10.1063/1.4917222
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Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
Journal article published in 2015 by
K. Lekhal,
B. Damilano 
,
H. T. Ngo ,
Daniel Rosales,
P. De Mierry,
S. Hussain,
P. Vennegues,
Bernard Gil
,
H. T. Ngo ,
Daniel Rosales,
P. De Mierry,
S. Hussain,
P. Vennegues,
Bernard Gil
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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Abstract
XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission