Published in

28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005.

DOI: 10.1109/isse.2005.1491018

PIERS Online, 5(2), p. 455-458

DOI: 10.2529/piers051007052841

Links

Tools

Export citation

Search in Google Scholar

Magnetic nanostructure hysteresis loop calculation for modified thin film multi-layer by ion irradiation

Journal article published in 1 by Diyar Bajalan, H. Hauser, P. L. Fulmek
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

The fluence of ion irradiation on paramagnetic, polycrystalline thin films affects both anisotropy and spontaneous magnetization Ms . The dependence of coercivity and initial susceptibility on Ms is predicted by a hysteresis model considering the balance of energy with good qualitative agreement. The calculated bit stability, determined by the anisotropy constant, may be promising for future data storage applications