28th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005.
DOI: 10.1109/isse.2005.1491018
PIERS Online, 5(2), p. 455-458
DOI: 10.2529/piers051007052841
Full text: Unavailable
The fluence of ion irradiation on paramagnetic, polycrystalline thin films affects both anisotropy and spontaneous magnetization Ms . The dependence of coercivity and initial susceptibility on Ms is predicted by a hysteresis model considering the balance of energy with good qualitative agreement. The calculated bit stability, determined by the anisotropy constant, may be promising for future data storage applications