A method of controlled diamond doping, consisting in introducing a solid-state silicon source into a CVD reactor chamber is proposed and implemented. Such an approach is tested during diamond film and isolated nanocrystallite growth on silicon, molybdenum, sapphire, copper, and quartz substrates. The approach to nanodiamond doping with silicon during CVD synthesis, developed in this paper, is promising for developing stable highly efficient luminescent nanodiamonds.