American Institute of Physics, Applied Physics Letters, 23(97), p. 233111
DOI: 10.1063/1.3524217
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The evolution of electronic structures of hydrogenated graphene with different amount of hydrogen (H) coverage was investigated by ultraviolet photoemission spectroscopy and optical absorption spectroscopy. Raman spectroscopy and x-ray photoelectron spectroscopy were used to monitor and evaluate the H coverage. At low H coverage, the sp3 C H bonds embedded within a sp2 C matrix behave as defects in graphene and depress the delocalized π electron system. At high H coverage, two localized π electron states originating from the sp2 C clusters encircled by the sp3 C H matrix appear in the electronic band structures, and an opening of a band gap has been observed.