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Beilstein-Institut, Beilstein Journal of Nanotechnology, (3), p. 722-730, 2012

DOI: 10.3762/bjnano.3.82

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The memory effect of nanoscale memristors investigated by conducting scanning probe microscopy methods

Journal article published in 2012 by César Moreno ORCID, Carmen Munuera ORCID, Xavier Obradors, Carmen Ocal
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We report on the use of scanning force microscopy as a versatile tool for the electrical characterization of nanoscale memristors fabricated on ultrathin La0.7Sr0.3MnO3 (LSMO) films. Combining conventional conductive imaging and nanoscale lithography, reversible switching between low-resistive (ON) and high-resistive (OFF) states was locally achieved by applying voltages within the range of a few volts. Retention times of several months were tested for both ON and OFF states. Spectroscopy modes were used to investigate the I–V characteristics of the different resistive states. This permitted the correlation of device rectification (reset) with the voltage employed to induce each particular state. Analytical simulations by using a nonlinear dopant drift within a memristor device explain the experimental I–V bipolar cycles.