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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 17(9), p. 5749-5757, 2021

DOI: 10.1039/d1tc00227a

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Flexible random resistive access memory devices with ferrocene–rGO nanocomposites for artificial synapses

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Flexible RRAM devices based on redox active ferrocene–rGO nanocomposites exhibit an enhanced ON/OFF ratio of 108 and synapse simulations simultaneously.