Published in
2020 IEEE Symposium on VLSI Technology, 2020
DOI: 10.1109/vlsitechnology18217.2020.9265061
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Nanosecond Laser Anneal (NLA) for Si-implanted HfO2 Ferroelectric Memories Integrated in Back-End Of Line (BEOL)
Proceedings article published in 2020 by
L. Grenouillet,
T. Francois 
,
J. Coignus,
S. Kerdiles,
N. Vaxelaire,
C. Carabasse,
F. Mehmood,
S. Chevalliez,
C. Pellissier,
F. Triozon,
F. Mazen,
G. Rodriguez,
T. Magis,
V. Havel,
S. Slesazeck
and other authors.
,
J. Coignus,
S. Kerdiles,
N. Vaxelaire,
C. Carabasse,
F. Mehmood,
S. Chevalliez,
C. Pellissier,
F. Triozon,
F. Mazen,
G. Rodriguez,
T. Magis,
V. Havel,
S. Slesazeck
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
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