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Royal Society of Chemistry, Nanoscale, 36(12), p. 18931-18937, 2020

DOI: 10.1039/d0nr04129g

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High-performance Monolayer Na3Sb Shrinking Transistors: A DFT-NEGF Study

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.