Published in
American Physical Society, Physical review B, 23(84)
DOI: 10.1103/physrevb.84.235418
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Silicate-free growth of high-quality ultrathin cerium oxide films on Si(111)
,
Björn Kaemena,
Sebastian Gevers,
Florian Bertram,
Torsten Wilkens,
Daniel Bruns,
Jan Bätjer,
Thomas Schmidt,
Joachim Wollschläger,
Jens Falta
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Abstract
Ultrathin Ce(2)O(3) layers have been grown on Si(111) by reactive metal deposition in an oxygen background and characterized by x-ray standing waves, x-ray diffraction, x-ray photoelectron spectroscopy, and low-energy electron diffraction to elucidate and quantify both atomic structure and chemical composition. It is demonstrated that highly ordered, mostly B-oriented, epitaxial ceria films can be achieved by preadsorption of a monolayer of atomic chlorine, effectively passivating the substrate and thereby suppressing cerium silicate and silicon oxide formation at the interface.