Published in
American Institute of Physics, Applied Physics Letters, 21(115), p. 213502, 2019
DOI: 10.1063/1.5125776
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Trap characterization in ultra-wide bandgap Al0.65Ga0.4N/Al0.4Ga0.6N MOSHFET's with ZrO2 gate dielectric using optical response and cathodoluminescence
Journal article published in 2019 by
Mohi Uddin Jewel 
,
Md Didarul Alam,
Shahab Mollah ,
Kamal Hussain,
Virginia Wheeler ,
Charles Eddy,
Mikhail Gaevski,
Grigory Simin,
Mvs Chandrashekhar,
Asif Khan
,
Md Didarul Alam,
Shahab Mollah ,
Kamal Hussain,
Virginia Wheeler ,
Charles Eddy,
Mikhail Gaevski,
Grigory Simin,
Mvs Chandrashekhar,
Asif Khan
This paper was not found in any repository, but could be made available legally by the author.
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