Royal Society of Chemistry, CrystEngComm, 27(21), p. 4036-4041, 2019
DOI: 10.1039/c9ce00463g
Full text: Unavailable
We have observed anisotropic mosaicity of an m-plane GaN homoepitaxial layer by X-ray diffraction topography imaging over a wafer and X-ray rocking curves measured at various wafer points.