Published in
Elsevier, Microelectronic Engineering, (216), p. 111027
DOI: 10.1016/j.mee.2019.111027
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Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs
Journal article published in 2019 by
Y. Contoyiannis,
S. M. Potirakis,
S. G. Stavrinides 
,
M. P. Hanias,
D. Tassis,
C. G. Theodorou
,
M. P. Hanias,
D. Tassis,
C. G. Theodorou
This paper was not found in any repository, but could be made available legally by the author.
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