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First-principles study of HfO2: GaAs interface passivation by Si and Ge

Journal article published in 2009 by W. Wang ORCID, K. Xiong, G. Lee, M. Huang, R. M. Wallace ORCID, K. Cho
This paper was not found in any repository; the policy of its publisher is unknown or unclear.
This paper was not found in any repository; the policy of its publisher is unknown or unclear.

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