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Wiley, Advanced Materials Interfaces, 22(4), p. 1700722, 2017

DOI: 10.1002/admi.201700722

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Decreasing Defect-State Density of Al2 O3 /Ga x In1− x As Device Interfaces with InO x Structures

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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