Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 7(65), p. 2778-2783, 2018
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Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress
Journal article published in 2018 by
M. Ruzzarin 
,
M. Meneghini ,
A. Barbato,
V. Padovan,
O. Haeberlen ,
M. Silvestri,
T. Detzel ,
G. Meneghesso ,
E. Zanoni
,
M. Meneghini ,
A. Barbato,
V. Padovan,
O. Haeberlen ,
M. Silvestri,
T. Detzel ,
G. Meneghesso ,
E. Zanoni
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