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American Scientific Publishers, Journal of Nanoscience and Nanotechnology, 10(18), p. 7315-7315

DOI: 10.1166/jnn.2018.16036

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A 1T Dynamic Random Access Memory Cell Based on Gated Thyristor with Surrounding Gate Structure for High Scalability (Journal of Nanoscience and Nanotechnology, Vol. 18(9), pp. 5919–5924 (2018))

Journal article published in 2018 by Hyungjin Kim, Sihyun Kim, Hyun-Min Kim, Kitae Lee, Sangwan Kim, Byung-Gook Pak
Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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