Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nanotechnology, p. 1-1, 2016
DOI: 10.1109/tnano.2016.2635110
Links
Tools
Analysis of high-field hole transport in germanium and silicon nanowires based on Boltzmann’s transport equation
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 