Published in
American Institute of Physics, Applied Physics Letters, 2(109), p. 023511
DOI: 10.1063/1.4958706
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Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors
Journal article published in 2016 by
R. Jiang 
,
X. Shen,
J. Chen,
G. X. Duan,
E. X. Zhang,
D. M. Fleetwood,
R. D. Schrimpf ,
S. W. Kaun,
E. C. H. Kyle,
J. S. Speck,
S. T. Pantelides
,
X. Shen,
J. Chen,
G. X. Duan,
E. X. Zhang,
D. M. Fleetwood,
R. D. Schrimpf ,
S. W. Kaun,
E. C. H. Kyle,
J. S. Speck,
S. T. Pantelides
This paper is made freely available by the publisher.
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