@inproceedings{Barettin2015, abstract = {We report on numerical simulations of quantum-dot heterostructures derived from experimental high-resolution transmission electron microscopy results. A real sample containing large InGaN islands with size of ten of nm and non-uniform In content is analyzed. The three-dimensional models for the quantum dots have been directly extrapolated from experimental results by a numerical algorithm. We show electromechanical, continuum k·p, empirical tight-binding and optical calculations for these realistic structures, which present a very good agreement if compared with experimental measurements, implying that the use of realistic structures can provide significant improvements into the modeling and the understanding of quantum-dot nanostructures.}, author = {Barettin, Daniele and Maur, Matthias Auf Der and Auf der Maur, Matthias and Pecchia, Alessandro and Rodrigues, Walter and Tsatsulnikov, Andrei F. and H¨ytch, Martin J. and Sakharov, Alexei V. and Sergey, Yu and Lundin, Wsevolod V. and Nikolaev, Ae E. and Cherkashin, Nikolay and Karpov, Sergey Y.-U. and Hytch, Martin J. and Karpov, Sy and Karpov, Aldo and di Carlo, Aldo and Carlo, Di and Di Carlo, A.}, doi = {10.1109/nano.2015.7388939}, journal = {2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)}, month = {jul}, title = {Realistic model of LED structure with InGaN quantum-dots active region}, url = {https://www.researchgate.net/profile/Walter_Rodrigues/publication/290445199_Realistic_model_of_LED_structure_with_InGaN_quantum-dots_active_region/links/5699086908ae6169e551627e.pdf}, year = {2015} } @article{Barettin2016, author = {Barettin, Daniele and Maur, Matthias Auf der and Carlo, Aldo di and Pecchia, Alessandro and Tsatsulnikov, Andrei F. and Sakharov, Alexei V. and Lundin, Wsevolod V. and Nikolaev, Andrei E. and Usov, Sergey O. and Cherkashin, Nikolay and Hÿtch, Martin J. and Karpov, Sergey Yu}, doi = {10.1088/0957-4484/28/1/015701}, journal = {Nanotechnology}, month = {nov}, pages = {015701}, title = {Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes}, url = {https://oadoi.org/10.1088/0957-4484/28/1/015701}, volume = {28}, year = {2016} } @article{Barettin2017, author = {Barettin, Daniele and Auf der Maur, Matthias and di Carlo, Aldo and Pecchia, Alessandro and Tsatsulnikov, Andrei F. and Lundin, Wsevolod V. and Sakharov, Alexei V. and Nikolaev, Andrei E. and Korytov, Maxim and Cherkashin, Nikolay and Hÿtch, Martin J. and Karpov, Sergey Yu}, doi = {10.1088/1361-6528/aa75a8}, journal = {Nanotechnology}, month = {jun}, pages = {275201}, title = {Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes}, url = {https://oadoi.org/10.1088/1361-6528/aa75a8}, volume = {28}, year = {2017} } @article{Cherkashin2015, abstract = {The diffusion and interaction of impurity atoms in semiconductors play an important role in modelling of the technological processes for device fabrication. Being mobile, impurity atoms, vacancies and interstitials can recombine and/or precipitate in the form of stable complexes which leads to the modification of target material properties. Here, we present an analytic model that predicts the concentrations of such complexes as a function of point defect concentrations using the probabilities for point defects to encounter and the probabilities for the formation of specific complexes dependent on their formation energies. This approach is general and can be used in different systems. We applied this model to the formation of different complexes after H+ implantation in silicon at room temperature. The formation energies of the complexes were calculated using the density functional theory. We linked the macroscopic strain measured in the implanted crystal to the individual deformation fields generated by the different complexes and to their concentrations. Such model calibration allowed determining the diffusion coefficients of silicon vacancies and interstitials at room temperature, the time required for the formation of all the complexes, the concentrations of complexes as a function of H concentration and the specific role of some complexes in generating strain. The model can be extended to the case of the systems co-implanted with different ions and can be applied for developing the SmartCut® technology used for creating innovative substrates.}, author = {Cherkashin, N. and Darras, F.-X. and Pochet, P. and Reboh, S. and Ratel Ramond, N. and Claverie, A.}, doi = {10.1016/j.actamat.2015.07.078}, journal = {Acta Materialia}, month = {aug}, pages = {187-195}, title = {Modelling of point defect complex formation and its application to H+ ion implanted silicon}, url = {https://www.researchgate.net/profile/N_Cherkashin/publication/280922137_Modelling_of_point_defect_complex_formation_and_its_application_to_H_ion_implanted_silicon/links/55cdf5ed08ae6a881381804d.pdf}, volume = {99}, year = {2015} } @article{Cherkashin2015_2, abstract = {Hydrogen implantation at room temperature into monocrystalline silicon leads to the formation of complex defects and also to the appearance of in-plane compressive stress. During annealing hydrogen atoms and vacancies co-precipitate into platelets lying on two types of habit planes. These platelets play a decisive role in the fracture of the material that can occur during further annealing and which is used for the manufacture of SOI wafers. Thus, their stress assisted nucleation mechanism has to be well understood. Here, we develop a formalism based on the Volmer’s model which allows calculating the variation of the free Gibbs energy of the system following the nucleation of a platelet. In an unstressed crystal, this energy only relies on the habit plane of the platelet. When the system is under stress, this energy also depends on a term coupling this stress and the strain field generated by the platelet. Because those energies control the nucleation rate of the platelets variants, we could calibrate our model using the transmission electron microscopy observations of the platelets occurrences as a function of depth and, thus, as a function of the magnitude of the intrinsic stress and the angles between the stress direction and Burgers vectors of the considered platelets. These experimental distributions allowed us adjusting the parameters describing the Gibbs free energy of platelets.}, author = {Cherkashin, Nikolay and Darras, Francois Xavier and Claverie, Alain}, doi = {10.4028/www.scientific.net/ssp.242.190}, journal = {Solid State Phenomena}, month = {oct}, pages = {190-195}, title = {Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing}, url = {https://oadoi.org/10.4028/www.scientific.net/ssp.242.190}, volume = {242}, year = {2015} } @article{Cherkashin2015_3, abstract = {We have studied the effect of reducing the implantation energy towards low keV values on the areal density of He and H atoms stored within populations of blister cavities formed by co-implantation of the same fluence of He then H ions into Si(001) wafers and annealing. Using a variety of experimental techniques, we have measured blister heights and depth from the surface, diameter, areal density of the cracks from which they originate as functions of implantation energy and fluence. We show that there is a direct correlation between the diameters of the cracks and the heights of the associated blisters. This correlation only depends on the implantation energy, i.e., only on the depth at which the cracks are located. Using finite element method modeling, we infer the pressure inside the blister cavities from the elastic deformations they generate, i.e., from the height of the blisters. From this, we demonstrate that the gas pressure within a blister only depends on the diameter of the associated crack and not on its depth position and derive an analytical expression relating these parameters. Relating the pressure inside a blister to the respective concentrations of gas molecules it contains, we deduce the areal densities of He and H atoms contained within the populations of blisters. After low-energy implantations (8 keV He+, 3 keV H+), all the implanted He and H atoms contribute to the formation of the blisters. There is no measurable exo-diffusion of any of the implanted gases, in contrast to what was assumed at the state of the art to explain the failure of the Smart-Cut technology when using very low energy ion implantation for the fabrication of ultra-thin layers. Alternative explanations must be investigated.}, author = {Cherkashin, N. and Daghbouj, N. and Darras, F.-X. and Fnaiech, M. and Claverie, A.}, doi = {10.1063/1.4938108}, journal = {Journal of Applied Physics}, month = {dec}, pages = {245301}, title = {Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy}, url = {https://hal.archives-ouvertes.fr/hal-01719496/file/1.4938108.pdf}, volume = {118}, year = {2015} } @article{Cherkashin2017, abstract = {AbstractA bewildering number of techniques have been developed for transmission electron microscopy (TEM), involving the use of ever more complex combinations of lens configurations, apertures and detector geometries. In parallel, the developments in the field of ion beam instruments have modernized sample preparation and enabled the preparation of various types of materials. However, the desired final specimen geometry is always almost the same: a thin foil of uniform thickness. Here we will show that judicious design of specimen geometry can make all the difference and that experiments can be carried out on the most basic electron microscope and in the usual imaging modes. We propose two sample preparation methods that allow the formation of controlled moiré patterns for general monocrystalline structures in cross-section and at specific sites. We developed moiré image treatment algorithms using an absolute correction of projection lens distortions of a TEM that allows strain measurements and mapping with a nanometer resolution and 10−4 precision. Imaging and diffraction techniques in other fields may in turn benefit from this technique in perspective.}, author = {Cherkashin, Nikolay and Denneulin, Thibaud and Hÿtch, Martin J.}, doi = {10.1038/s41598-017-12695-8}, journal = {Scientific Reports}, month = {sep}, title = {Electron microscopy by specimen design: application to strain measurements}, url = {https://doi.org/10.1038/s41598-017-12695-8}, volume = {7}, year = {2017} } @article{Cherkashin2018, author = {Cherkashin, N. and Daghbouj, N. and Seine, G. and Claverie, A.}, doi = {10.1063/1.5012505}, journal = {Journal of Applied Physics}, month = {apr}, pages = {161556}, title = {Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon}, url = {https://oadoi.org/10.1063/1.5012505}, volume = {123}, year = {2018} } @article{Claverie2015, author = {Claverie, Alain and Cherkashin, Nikolay}, doi = {10.1016/j.nimb.2015.09.011}, journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}, month = {sep}, title = {On the origin of dislocation loops in irradiated materials: A point of view from silicon}, url = {https://oadoi.org/10.1016/j.nimb.2015.09.011}, year = {2015} } @article{Daghbouj2016, author = {Daghbouj, N. and Cherkashin, N. and Darras, F.-X. and Paillard, V. and Fnaiech, M. and Claverie, A.}, doi = {10.1063/1.4945032}, journal = {Journal of Applied Physics}, month = {apr}, pages = {135308}, title = {Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon}, url = {https://hal.archives-ouvertes.fr/hal-01719485/file/1.4945032.pdf}, volume = {119}, year = {2016} } @article{Ledentsov2017, author = {Ledentsov, N. N. and Shchukin, V. A. and Shernyakov, Yu M. and Kulagina, M. M. and Payusov, A. S. and Gordeev, N. Yu and Maximov, M. V. and Cherkashin, N. A.}, doi = {10.1088/1361-6641/aa5144}, journal = {Semiconductor Science and Technology}, month = {jan}, pages = {025016}, title = {(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range}, url = {https://oadoi.org/10.1088/1361-6641/aa5144}, volume = {32}, year = {2017} } @inproceedings{Ledentsov2017_2, author = {Ledentsov, N. N. and Shchukin, V. A. and Shernyakov, Y.-U. M. and Kulagina, M. M. and Payusov, A. S. and Gordeev, N. Y.-U. and Maximov, M. V. and Cherkashin, N. A.}, doi = {10.1117/12.2252957}, journal = {Proceedings of SPIE}, month = {feb}, title = { Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates }, url = {https://oadoi.org/10.1117/12.2252957}, year = {2017} } @article{Ledentsov2018, author = {Ledentsov, N. N. and Shchukin, V. A. and Shernyakov, Y.-U. M. and Kulagina, M. M. and Payusov, A. S. and Gordeev, N. Y.-U. and Maximov, M. V. and Zhukov, A. E. and Denneulin, T. and Cherkashin, N.}, doi = {10.1364/oe.26.013985}, journal = {Optics Express}, month = {may}, pages = {13985}, title = {Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates}, url = {https://doi.org/10.1364/oe.26.013985}, volume = {26}, year = {2018} } @article{Prudkovskiy2018, author = {Prudkovskiy, V. S. and Iacovella, F. and Katin, K. P. and Maslov, M. M. and Cherkashin, N.}, doi = {10.1088/1361-6528/aacc5d}, journal = {Nanotechnology}, month = {jul}, pages = {365304}, title = {A bottom-up approach for controlled deformation of carbon nanotubes through blistering of supporting substrate surface}, url = {http://iopscience.iop.org/article/10.1088/1361-6528/aacc5d/pdf}, volume = {29}, year = {2018} } @article{Renard2016, abstract = {AbstractInterest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm−2 for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III–V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.}, author = {Renard, Charles and Molière, Timothée and Cherkashin, Nikolay and Alvarez, José and Vincent, Laetitia and Jaffré, Alexandre and Hallais, Géraldine and Connolly, James Patrick and Mencaraglia, Denis and Bouchier, Daniel}, doi = {10.1038/srep25328}, journal = {Scientific Reports}, month = {may}, title = {High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed}, url = {http://dx.doi.org/10.1038/srep25328}, volume = {6}, year = {2016} } @article{Stumpf2018, author = {Stumpf, F. and Abu Quba, A. A. and Singer, P. and Rumler, M. and Cherkashin, N. and Schamm-Chardon, S. and Cours, R. and Rommel, M.}, doi = {10.1063/1.5022558}, journal = {Journal of Applied Physics}, month = {mar}, pages = {125104}, title = {Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy}, url = {https://oadoi.org/10.1063/1.5022558}, volume = {123}, year = {2018} } @article{Tikhomirov2016, author = {Tikhomirov, V. G. and Zemlyakov, V. E. and Volkov, V. V. and Parnes, Y.-A. M. and Vyuginov, V. N. and Lundin, W. V. and Sakharov, A. V. and Zavarin, E. E. and Tsatsulnikov, A. F. and Cherkashin, N. A. and Mizerov, M. N. and Ustinov, V. M.}, doi = {10.1134/s1063782616020263}, journal = {Semiconductors}, month = {feb}, pages = {244-248}, title = {Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation}, url = {https://oadoi.org/10.1134/s1063782616020263}, volume = {50}, year = {2016} } @article{Tsatsulnikov2015, author = {Tsatsulnikov, A. F. and Lundin, W. V. and Sakharov, A. V. and Nikolaev, A. E. and Zavarin, E. E. and Usov, S. O. and Yagovkina, M. A. and Hÿtch, M. J. and Korytov, M. and Cherkashin, N.}, doi = {10.1166/sam.2015.2277}, journal = {Science of Advanced Materials}, month = {aug}, pages = {1629-1635}, title = {Formation of Three-Dimensional Islands in the Active Region of InGaN Based Light Emitting Diodes Using a Growth Interruption Approach}, url = {https://hal.archives-ouvertes.fr/hal-01721151/file/Tsatsulnikov_Cherkashin_2015.pdf}, volume = {7}, year = {2015} } @article{Tsatsulnikov2015_2, abstract = {The design features of light-emitting-diode heterostructures with a monolithic InGaN/GaN active region containing several InGaN quantum wells (QWs) emitting at different wavelengths, grown by metal-organic chemical vapor deposition, are studied. It is shown that the number of emission bands can be raised to three by increasing the number of deposited InGaN QWs with different indium contents. The emission efficiency decreases by approximately 30% with increasing number of QWs at high currents. The dependences of the optical properties of the heterostructures on the number of QWs and types of barriers between the QWs (GaN layer or InGaN/GaN short-period superlattice) are analyzed. It is demonstrated that the ratio between the intensities of the emission lines widely varies with current flowing through the structure and greatly depends on the type and width of the barriers between the QWs.}, author = {Tsatsulnikov, A. F. and Lundin, W. V. and Sakharov, A. V. and Zavarin, E. E. and Usov, S. O. and Nikolaev, A. E. and Sinitsyn, M. A. and Cherkashin, N. A. and Karpov, S. Y.}, doi = {10.1134/s1063782615110238}, journal = {Semiconductors}, month = {nov}, pages = {1516-1521}, title = {Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency}, url = {https://oadoi.org/10.1134/s1063782615110238}, volume = {49}, year = {2015} } @article{Tsatsulnikov2016, author = {Tsatsulnikov, A. F. and Lundin, W. V. and Sakharov, A. V. and Zavarin, E. E. and Usov, S. O. and Nikolaev, A. E. and Yagovkina, M. A. and Ustinov, V. M. and Cherkashin, N. A.}, doi = {10.1134/s1063782616090232}, journal = {Semiconductors}, month = {sep}, pages = {1241-1247}, title = {Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs}, url = {https://oadoi.org/10.1134/s1063782616090232}, volume = {50}, year = {2016} }