Tetsuya Tohei - Dissemin

All papers authored by Tetsuya Tohei

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2024 Tomoki Onabe, Zhendong Wu, Tetsuya Tohei

, Yusuke Hayashi, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura

, Takahiro Naito, Kohei Hamaya, Akira Sakai

Local strain distribution analysis in strained SiGe spintronics devices

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This paper is made freely available by the publisher.

2022 Zexuan Zhang

, Yusuke Hayashi, Tetsuya Tohei

, Akira Sakai

, Vladimir Protasenko

, Jashan Singhal

, Hideto Miyake

, Huili Grace Xing

, Debdeep Jena

, YongJin Cho

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

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Ryotaro Miyake, Zenya Nagata, Kenta Adachi, Yusuke Hayashi, Tetsuya Tohei

, Akira Sakai

Versatile Functionality of Four-Terminal TiO_2–x Memristive Devices as Artificial Synapses for Neuromorphic Computing

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Yusuke Hayashi

, Kenjiro Uesugi

, Kanako Shojiki

, Tetsuya Tohei

, Akira Sakai

, Hideto Miyake

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

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Haruna Shiomi, Akira Ueda, Tetsuya Tohei

, Yasuhiko Imai, Takeaki Hamachi, Kazushi Sumitani, Shigeru Kimura

, Yuji Ando, Tamotsu Hashizume, Akira Sakai

Analysis of inverse-piezoelectric-effect-induced lattice deformation in AlGaN/GaN high-electron-mobility transistors by time-resolved synchrotron radiation nanobeam X-ray diffraction

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T. Hamachi

, T. Tohei

, Y. Hayashi

, M. Imanishi, S. Usami, Y. Mori, N. Ikarashi

, A. Sakai

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

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2020 A. Ueda, T. Hamachi

, A. Okazaki, S. Takeuchi, T. Tohei

, M. Imanishi, M. Imade, Y. Mori, A. Sakai

Local piezoelectric properties in Na-flux GaN bulk single crystals

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Mamoru Joko, Yusuke Hayashi, Tetsuya Tohei

, Akira Sakai

Fabrication of GaO x based crossbar array memristive devices and their resistive switching properties

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2019 Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei

, Nobuyuki Ikarashi, Akira Sakai

Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

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Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei

, Nobuyuki Ikarashi, Akira Sakai

Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

Download from www.nature.com

Takeaki Hamachi

, Tetsuya Tohei

, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method

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Kazuki Shida

, Nozomi Yamamoto, Tetsuya Tohei

, Masayuki Imanishi, Yusuke Mori, Kazushi Sumitani, Yasuhiko Imai, Shigeru Kimura, Akira Sakai

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

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Takeaki Hamachi, Tetsuya Tohei

, Masayuki Imanishi, Yusuke Mori, Akira Sakai

Local current leakage at threading dislocations in GaN bulk single crystals grown by a modified Na-flux method

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Shotaro Takeuchi, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei

, Nobuyuki Ikarashi, Akira Sakai

Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals

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2018 Kazuki Shida

, Shotaro Takeuchi, Tetsuya Tohei

, Yasuhiko Imai, Shigeru Kimura, Andreas Schulze, Matty Caymax, Akira Sakai

Depth-resolved analysis of lattice distortions in high-Ge-content SiGe/compositionally graded SiGe films using nanobeam x-ray diffraction

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Kengo Yamaguchi, Shotaro Takeuchi, Tetsuya Tohei

, Nobuyuki Ikarashi, Akira Sakai

Analysis of Ti valence states in resistive switching regions of a rutile TiO2− x four-terminal memristive device

Download from stacks.iop.org

T. Hamachi, S. Takeuchi

, T. Tohei

, M. Imanishi, M. Imade, Y. Mori, A. Sakai

Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy

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Joshua Hoemke

, Eita Tochigi

, Tetsuya Tohei

, Hidehiro Yoshida

, Naoya Shibata, Yuichi Ikuhara, Yoshio Sakka

Inversion domain network stabilization and spinel phase suppression in ZnO

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K. Shida, S. Takeuchi

, T. Tohei

, H. Miyake

, K. Hiramatsu, K. Sumitani, Y. Imai, S. Kimura

, A. Sakai

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

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All papers authored by Tetsuya Tohei