Katie Gann
0000-0001-7964-8288
3 papers found
Refreshing results…
Silicon implantation and annealing in β-Ga2O3: Role of ambient, temperature, and time
500 °C operation of β-Ga2O3 field-effect transistors
Initial nucleation of metastable γ-Ga2O3 during sub-millisecond thermal anneals of amorphous Ga2O3
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