Hongyao Xie
0000-0001-7555-919X
35 papers found
Refreshing results…
Balanced High Thermoelectric Performance in n-Type and p-Type CuAgSe Realized through Vacancy Manipulation
Vacancy Suppression Induced Synergetic Optimization of Thermoelectric Performance in Sb-Doped GeTe Evidenced by Positron Annihilation Spectroscopy
Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States
Contrasting the Roles of Cu Interstitials and Sb Substitutions in Regulating Ferroelectric Distortions and Thermoelectric Properties of α-GeTe
Defect Reconfiguration in Hole-Doped PbSe via Minute Te Doping for Significantly Enhanced Thermoelectric Performance
Excellent Stability of Ga-Doped Garnet Electrolyte against Li Metal Anode via Eliminating LiGaO2 Precipitates for Advanced All-Solid-State Batteries
Electrically Tunable Antiferroelectric to Paraelectric Switching in a Semiconductor
Doping Achieves High Thermoelectric Performance in SnS: A First-Principles Study
Enhanced Thermoelectric Properties of Cu2SnSe3-Based Materials with Ag2Se Addition
Weak-Bonding Elements Lead to High Thermoelectric Performance in BaSnS3 and SrSnS3: A First-Principles Study
Synergistically Enhanced Thermoelectric Performance of Cu2SnSe3-Based Composites via Ag Doping Balance
Boosting Thermoelectric Properties of AgBi3(SeyS1–y)5 Solid Solution via Entropy Engineering
Ultralow Thermal Conductivity and High Thermoelectric Performance in AgCuTe1–xSex through Isoelectronic Substitution
Significant Enhancement in the Thermoelectric Performance of Aluminum-Doped ZnO Tuned by Pore Structure
One-Step Processing of Soft Electrolyte/Metallic Lithium Interface for High-Performance Solid-State Lithium Batteries
Enhanced Thermoelectric Performance of Bi0.46Sb1.54Te3 Nanostructured with CdTe
Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12–x Compounds
Identifying the Origins of High Thermoelectric Performance in Group IIIA Element Doped PbS
Anomalously Large Seebeck Coefficient of CuFeS2 Derives from Large Asymmetry in the Energy Dependence of Carrier Relaxation Time
Large Thermal Conductivity Drops in the Diamondoid Lattice of CuFeS2 by Discordant Atom Doping
Missing publications? Search for publications with a matching author name.