Juan Bautista Roldan Aranda

All papers authored by Juan Bautista Roldan Aranda

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2018 S. Aldana, J. B. Roldán

, P. García-Fernández, J. Suñe, R. Romero-Zaliz, F. Jiménez-Molinos

, S. Long, F. Gómez-Campos, M. Liu

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

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2015 P. González, M. J. Ibáñez, A. M. Roldán, J. B. Roldán

An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

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2012 B. Blanco-Filgueira, P. López, Juan B. Roldán

Analytical modelling of size effects on the lateral photoresponse of CMOS photodiodes

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M. Balaguer, J. B. Roldán

, L. Donetti, F. Gámiz

Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: The role of crystallographic orientation

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2011 María Balaguer, Juan Bautista Roldan

, Francisco Gamiz

In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations

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M. Balaguer, B. Iñiguez, J. B. Roldán

An analytical compact model for Schottky-barrier double gate MOSFETs

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Enrique Moreno Perez, Domingo Barrera Rosillo, Juan Bautista Roldan Aranda, Juan Bautista Roldan Aranda

, Francisco J. Garcia Ruiz, Domingo Barrera Rosillo, María José Ibanez Perez, María José Ibanez Perez, Andrés Godoy, Francisco Gamiz

An inversion-charge analytical model for square gate-all-around MOSFETs

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M. Cheralathan, C. Sampedro, J. B. Roldán

, F. Gámiz, G. Iannaccone, E. Sangiorgi, B. Iñiguez

Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs

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Andrés M. Roldán, Juan B. Roldán

, Càndid Reig, M.-D. Cubells-Beltrán, Diego Ramírez, Susana Cardoso, Paulo P. Freitas

A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation

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2010 A. Roldán, C. Reig, M. D. Cubells-Beltrán, J. B. Roldán

, D. Ramírez, S. Cardoso, P. P. Freitas

Analytical compact modeling of GMR based current sensors: Application to power measurement at the IC level

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E. Moreno, J. B. Roldán

, F. G. Ruiz, D. Barrera, A. Godoy, F. Gámiz

An analytical model for square GAA MOSFETs including quantum effects

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J. B. Roldán

, Francisco Gamiz, F. Jiménez Molinos, Carlos Sampedro, Andrés Godoy, Francisco J. Garcia Ruiz, Noel Rodriguez

An Analytical $I$– $V$ Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects

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F. Jiménez-Molinos, J. B. Roldán

, M. Balaguer, F. Gámiz

An in-depth simulation study of Coulomb mobility in ultra-thin-body SOI MOSFETs

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L. Donetti, F. Gámiz, N. Rodriguez, N. Rodrı´guez, F. Jiménez-Molinos, J. B. Roldán

Hole transport in DGSOI devices: Orientation and silicon thickness effects

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2009 F. Gamiz, A. Godoy, L. Donetti, C. Sampedro, J. B. Roldan

, F. Ruiz, I. Tienda, N. Rodriguez, F. Jimenez-Molinos

Monte Carlo simulation of nanoelectronic devices

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M. Balaguer, J. B. Roldan

, I. M. Tienda-Luna, F. G. Ruiz, A. Godoy, F. Gaimiz, F. Gamiz, C. Sampedro

A new inversion charge centroid model for surrounding gate transistors with HfO2 as gate insulator

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2008 J. B. Roldan

, AndrÉs Godoy, Francisco Gamiz, M. Balaguer

Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

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2007 Noel Rodriguez, Francisco Gamiz, Juan B. Roldan

Modeling of Inversion Layer Centroid and Polysilicon Depletion Effects on Ultrathin-Gate-Oxide MOSFET Behavior: The Influence of Crystallographic Orientation

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N. Rodriguez, J. B. Roldán

, F. Gámiz

An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms

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All papers authored by Juan Bautista Roldan Aranda