Papers authored by Robert Martin
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R. W. Martin ,
A. J. Kent,
C. T. Foxon
Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy
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Diamagnetic shift of the A free exciton in CuGaSe2 single crystals
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Excited states of the free excitons in CuInSe2 single crystals
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S. Chenot,
I. R. Sellers,
P. Disseix,
A. Vasson,
J. Leymarie,
J. Y. Duboz,
M. Leroux,
F. Semond,
R. W. Martin
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Structural and optical properties of thin films of Cu(In,Ga)Se2 semiconductor compounds
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K. P. O'Donnell,
I. M. Watson
Al(1-x)In(x)N/GaN bilayers: Structure, morphology, and optical properties
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S. V. Novikov,
R. Broesler,
C. R. Staddon,
M. Hawkridge,
Z. Liliental Weber,
I. Demchenko,
J. D. Denlinger,
V. M. Kao,
F. Luckert,
R. W. Martin ,
W. Walukiewicz,
C. T. Foxon
Non‐equilibrium GaNAs alloys with band gap ranging from 0.8‐3.4 eV
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G. Christmann,
E. Gu,
M. D. Dawson,
J. J. Baumberg,
R. W. Martin ,
I. M. Watson
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E. Gu,
M. D. Dawson,
R. W. Martin ,
I. M. Watson
Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off
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Duncan Allsopp,
Robert W. Martin ,
Philip Shields,
Jaroslav Kovac,
Frantisek Uherek,
Wang Wang
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S. V. Novikov,
R. Broesler,
I. N. Demchenko,
J. D. Denlinger,
Z. Liliental Weber,
F. Luckert,
R. W. Martin ,
W. Walukiewicz,
C. T. Foxon
Highly mismatched crystalline and amorphous GaN1-xAsx alloys in the whole composition range
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C. Trager Cowan,
V. Matias,
A. Vantomme,
K. Lorenz,
E. Alves,
I. M. Watson
Optical and structural properties of Eu-implanted InxAl1-xN
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O. J. Rolinski,
I. F. Perepichka,
P. J. Skabara,
R. W. Martin ,
R. A. Pethrick,
D. J. S. Birch,
M. D. Dawson
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D. J. As,
M. Panfilova
Europium doping of zincblende GaN by ion implantation
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