All papers authored by Maria de Souza
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Maria Merlyne De Souza
Impact of channel thickness on the performance of an E-mode p-channel MOSHFET in GaN
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Hong Yao Long,
Mark R. Sweet,
Maria Merlyne De Souza ,
Ekkanath Madathil Sankara Narayanan
Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT
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T. Bouchet ,
Paul R. Chalker ,
M. Charles ,
Kevin J. Chen ,
Nadim Chowdhury,
Rongming Chu ,
Carlo De Santi ,
Maria Merlyne De Souza ,
Stefaan Decoutere ,
L. Di Cioccio ,
Bernd Eckardt
and 50 other authors
The 2018 GaN power electronics roadmap
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Maria Merlyne De Souza
Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide
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Maria De Souza
Decoupling of epitaxial graphene via gold intercalation probed by dispersive Raman spectroscopy
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Ekkanath Madathil Sankara Narayanan
The next generation 1200V Trench Clustered IGBT technology with improved trade-off relationship
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Frank U. Hamelmann
Design of Schottky Contacts for Optimum Performance of Thin-Film Silicon Solar Cells
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Nandha Kumar Subramani,
M. Rasheduzzaman,
S. Nandha Kumar
Designing High Power RF Amplifiers : An analytic approach
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Are carbon nanotubes still a viable option for ITRS 2024?
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N. Chevaux,
M. Rasheduzzaman
RF power amplifier: pushing the boundaries of performance versus cost
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