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Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
UploadFabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy
Download from www.researchgate.netMulti-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
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