Jonas Lähnemann
www.laehnemann.de
0000-0003-4072-2369
4 papers found
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Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3
Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs
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