Published in

American Institute of Physics, Applied Physics Letters, 9(109), p. 092403

DOI: 10.1063/1.4961670

Links

Tools

Export citation

Search in Google Scholar

Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

Journal article published in 2016 by Zhengyang Zhao ORCID, Mahdi Jamali, Noel D'Souza, Delin Zhang, Supriyo Bandyopadhyay ORCID, Jayasimha Atulasimha, Jian-Ping Wang
This paper is available in a repository.
This paper is available in a repository.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO