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IOP Publishing, Journal of Physics D: Applied Physics, 7(50), p. 075101, 2017

DOI: 10.1088/1361-6463/50/7/075101

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Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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