Published in
2014 44th European Solid State Device Research Conference (ESSDERC)
DOI: 10.1109/essderc.2014.6948843
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Physical model for GaN HEMT design optimization in high frequency switching applications
Proceedings article published in 2014 by
D. Cucak,
M. Vasic,
O. Garcia,
Y. Bouvier,
J. Oliver,
P. Alou,
J. A. Cobos,
A. Wang,
S. Martin-Horcajo,
F. Romero,
F. Calle 
This paper is available in a repository.
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