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Royal Society of Chemistry, Journal of Materials Chemistry C Materials for optical and electronic devices, 20(4), p. 4393-4401

DOI: 10.1039/c6tc01208f

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Novel high band gap pendant-borylated carbazole polymers with deep HOMO levels through direct N+=B- interaction for organic photovoltaics

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

In this communication, we investigate the direct and still conjugated intramolecular ⁺N=B⁻ interactions in novel high band gap borylated carbazole containing polymers, namely, poly(3,6-(N-di(2,4,6-trimethyl)phenylboryl-carbazole)-alt-4,8-di(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene) (P(3,6-BCBDT)) and poly(3,6-(N-di(2,4,6-trimethyl)phenylboryl-carbazole)-alt-3,3'''-didodecyl-2,2':5',2'':5'',2'''-quaterthiophene) (P(3,6-BCQT)), which result in ambipolarity, high electron affinity, and deep HOMO levels. The quasi-donor-acceptor nature of the two polymers was confirmed by UV-Vis absorption, electro-chemical property studies, and computer modelling. Band gaps of 2.07 eV for P(3,6-BCBDT) and 2.23 eV for P(3,6-BCQT) were obtained. P(3,6-BCQT) afforded a power conversion efficiency of 1.44%, with a J sc of 4.82 mA cm⁻², a V oc of 0.79 V and a FF of 37%, and P(3,6-BCBDT) performed better with an efficiency of 3.82%, with a J sc of 8.31 mA cm⁻², a V oc of 1.0 V based on its low lying HOMO level, and a FF of 45%.