Published in
American Institute of Physics, Applied Physics Letters, 13(108), p. 131904
DOI: 10.1063/1.4945594
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Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation
Journal article published in 2016 by
Yi Zhang,
Murad J. Y. Tayebjee 
,
Suntrana Smyth,
Miroslav Dvořák,
Xiaoming Wen ,
Hongze Xia,
Martin Heilmann ,
Yuanxun Liao,
Zewen Zhang,
Todd Williamson,
Joshua Williams ,
Stephen Bremner,
Santosh Shrestha ,
Shujuan Huang,
Timothy W. Schmidt
and other authors.
,
Suntrana Smyth,
Miroslav Dvořák,
Xiaoming Wen ,
Hongze Xia,
Martin Heilmann ,
Yuanxun Liao,
Zewen Zhang,
Todd Williamson,
Joshua Williams ,
Stephen Bremner,
Santosh Shrestha ,
Shujuan Huang,
Timothy W. Schmidt
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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