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IOP Publishing, Nanotechnology, 18(27), p. 185601

DOI: 10.1088/0957-4484/27/18/185601

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Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing

Journal article published in 2016 by B. Gupta, I. Di Bernardo ORCID, P. Mondelli, A. Della Pia, M. G. Betti, F. Iacopi ORCID, C. Mariani, N. Motta ORCID
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Distributing this paper is prohibited by the publisher

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Abstract

We analyse the effects of substrate polishing and of the epilayer thickness on the quality of graphene layers grown by high temperature annealing on 3C–SiC(111)/Si(111) by scanning tunnelling microscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, low energy electron diffraction and high resolution angle resolved photoemission spectroscopy. The results provide a comprehensive set of data confirming the superior quality of the graphene layers obtained on polished substrates, and the limitations of the growth obtained on unpolished surfaces.