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American Scientific Publishers, Journal of Nanoelectronics and Optoelectronics, 3(11), p. 315-322, 2016

DOI: 10.1166/jno.2016.1910

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Energy Level Engineering in In<sub>x</sub>Ga<sub>1–x</sub>As/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage

Journal article published in 2016 by Mahdi Ahmadi Borji, Esfandiar Rajaei
Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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