Published in
Springer (part of Springer Nature), Journal of Materials Science: Materials in Electronics, 3(27), p. 3095-3102
DOI: 10.1007/s10854-015-4135-4
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Phase transition, leakage conduction mechanism evolution and enhanced ferroelectric properties in multiferroic Mn-doped BiFeO3 thin films
,
Jie Wei,
Yang Liu,
Xiaofei Bai,
Peng Shi,
Shengchun Mao,
Xueqian Zhang,
Mao Shengchum,
Chen Li,
Brahim Dkhil
Full text: Unavailable
Abstract
Pure and Mn-doped BiFeO3 thin films wereprepared by a facile chemical solution deposition process.X-ray diffraction patterns and Raman spectra imply a phasetransition from a rhombohedral structure in pure BiFeO3film to a nearly tetragonal structure in Mn-doped BiFeO3films. Moreover, it is found that doping of Mn couldgreatly modify the surface morphology, leakage currentproperties and ferroelectric properties of BiFeO3 films.Consequently, the lowest leakage current density and thelargest remnant polarization are observed in BiFe0.925Mn0.075O3 film which could be well explained by theleakage conduction mechanism and its evolution from thespace-charge-limited current behavior for BiFeO3 andBiFe0.95Mn0.05O3 films to the Poole–Frenkel emission forBiFe0.925Mn0.075O3 film, as well as completely an Ohmicbehavior for BiFe0.90Mn0.10O3 film. Based on the X-rayphotoelectron spectroscopy analysis of Mn ions, we arguethat the varied valences of Mn ions such as Mn4?, Mn3?and Mn2? may play an important role in lowering leakage current density and enhancing the ferroelectric propertiesof BiFeO3 films.