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Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
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Characterization and Improvement of Charge Trapping in Gadolinium Incorporated Hf-based high-k/Metal gated n-MOSFETs
Proceedings article published in 2009 by
C. W. Chen,
H. C. Lai,
Y. L. Yeh,
W. K. Yeh,
S. H. Shu,
C. T. Lin,
C. H. Hsu,
L. W. Cheng,
M. Ma
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