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ECS Meeting Abstracts, 31(MA2011-02), p. 2086-2086, 2011

DOI: 10.1149/ma2011-02/31/2086

Institute of Electrical and Electronics Engineers, IEEE Transactions on Device and Materials Reliability, 1(11), p. 187-193, 2011

DOI: 10.1109/tdmr.2010.2103314

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Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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