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Nature Research, Scientific Reports, 1(4), 2014

DOI: 10.1038/srep04672

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Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

Journal article published in 2014 by Pradipta K. Nayak, J. A. Caraveo-Frescas, Zhenwei Wang, M. N. Hedhili ORCID, Q. X. Wang, H. N. Alshareef ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.