Published in
Wiley, physica status solidi (b) – basic solid state physics, 3(248), p. 578-582, 2010
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Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Journal article published in 2010 by
Matthias Wieneke,
Martin Noltemeyer,
Barbara Bastek,
Antje Rohrbeck,
Hartmut Witte,
Peter Veit,
Jürgen Bläsing,
Armin Dadgar 
,
Jürgen Christen,
Alois Krost
,
Jürgen Christen,
Alois Krost
This paper was not found in any repository, but could be made available legally by the author.
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